| PART |
Description |
Maker |
| TSG25N120CN |
Discrete Devices-IGBT-IGBT
|
Taiwan Semiconductor
|
| CY8C42223-24SXI CY8C42223-24SXIT CY8C42423-24LFXI |
MULTIFUNCTION PERIPHERAL, PDSO8
Power PSoC?/a> Devices
Power PSoC Devices
|
CYPRESS SEMICONDUCTOR CORP
http://
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
| APT40GP90J |
MOSFET
POWER MOS 7 IGBT
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology]
Advanced Power Electronics, Corp.
|
| APTGF90A60T1G |
110 A, 600 V, N-CHANNEL IGBT
Phase leg NPT IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
|
| APTGT30H170T3G |
Full - Bridge Trench Field Stop IGBT Power Module 45 A, 1700 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT50H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 80 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| APTGT20H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 32 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
